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triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 tga2540-fl october 2009 ? reva datasheet subject to change without notice. primary application product description key features measured performance 30 to 3000 mhz gan power amplifier bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical ? package dimensions: 25.15 x 14.48 x 4.85 mm ? bias: vd = 30 v, idq = 360 ma, vg = -3.32 v typical ? small signal gain: 19.5 db ? toi: 43 dbm ? nf: 4 db ? psat: 39.5 dbm, p1db: 35 dbm ? pae: >40% ? frequency range: 30 to 3000 mhz ? military communication the tga2540-fl power amplifier provides 19.5 db of small signal gain and greater than 8 w of output power across 30 to 3000 mhz band. the tga2540-fl is designed using triquint?s standard 0.25-m gan hemt production process. the tga2540-fl is available in a 4 lead flange mount package and is ideally suited for wideband communication transceivers. evaluation boards are available upon request. lead-free and rohs compliant. the information contained on this data sheet is technical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or transfer contrary to us law is prohibited. -25 -20 -15 -10 -5 0 5 10 15 20 25 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 frequency (ghz) gain, orl, irl (db) gain orl irl 32 33 34 35 36 37 38 39 40 41 42 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 frequency (ghz) psat (dbm) 0 10 20 30 40 50 60 70 80 90 100 pae (%) pae psat
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 tga2540-fl october 2009 ? reva table ii recommended operating conditions table i absolute maximum ratings 1 / 2 / 28 dbm input continuous wave power pin -2.4 to 1.5 ma gate current range ig -30 to 0 v gate voltage range vg 200 c channel temperature tchannel 2 / 850 ma drain current id 2 / 40 v drain voltage vd 65 v drain to gate voltage vd-vg notes value parameter symbol -3.32 v gate voltage vg 740 ma drain current under rf drive id_drive 360 ma drain current id 30 v drain voltage vd value parameter 1 / symbol 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, in put power, and output power shall not exceed the maximum power dissipation listed in table iv. 1 / see assembly diagram for bias instructions. the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 tga2540-fl october 2009 ? reva table iii rf characterization table bias: vd = 30 v, idq = 360 ma, vg = -3.32 v, typica l - - - - - - - max - - - - - - - min db 4 f = 30 - 3000 mhz noise figure nf dbm 43 f = 30 - 3000 mhz output toi toi dbm 35 f = 30 - 3000 mhz output power @ 1db compression p1db dbm 39.5 f = 30 - 3000 mhz saturated output power psat db 10 f = 30 - 3000 mhz output return loss orl db 12 f = 30 - 3000 mhz input return loss irl db 19.5 f = 30 - 3000 mhz small signal gain gain units nominal test conditions parameter symbol the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 tga2540-fl october 2009 ? reva table iv power dissipation and thermal properties -65 to 150 c 180 c jc = 6.9 c/w tchannel = 162 c tm = 1.3e+6 hrs jc = 6.9 c/w tchannel = 145 c tm = 4.1e+6 hrs pd = 18.8 w tchannel = 200 c tm = 1.3e+5 hrs value notes 30 seconds mounting temperature storage temperature vd = 30 v id = 740 ma pout = 39.5 dbm pd = 13.3 w tbaseplate = 70 c thermal resistance, jc under rf drive vd = 30 v id = 360 ma pd = 10.8 w tbaseplate = 70 c thermal resistance, jc tbaseplate = 70 c maximum power dissipation test conditions parameter median lifetime vs channel temperature the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited. 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 25 50 75 100 125 150 175 200 225 250 channel temperature (c) median lifetime (hours) fet7
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 tga2540-fl october 2009 ? reva measured data 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 frequency (ghz) irl and orl (db) irl orl bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 tga2540-fl october 2009 ? reva measured data 10 15 20 25 30 35 40 45 50 10 12 14 16 18 20 22 24 26 pin (dbm) pout (dbm), gain (db) 200 300 400 500 600 700 800 900 1000 id (ma) pout @ 1.5 ghz gain @ 1.5 ghz id @ 1.5 ghz 26 28 30 32 34 36 38 40 42 44 46 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) pout (dbm) psat p1db pin = 26 dbm bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 tga2540-fl october 2009 ? reva measured data 32 33 34 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) pout (dbm) -40 c 25 c 85 c bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited. 32 33 34 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) psat (dbm) 0 10 20 30 40 50 60 70 80 90 100 pae (%) pae psat
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 8 tga2540-fl october 2009 ? reva measured data 10 15 20 25 30 35 40 45 50 10 12 14 16 18 20 22 24 26 pin (dbm) pout (dbm), gain (db) 200 300 400 500 600 700 800 900 1000 id (ma) pout @ 1.5 ghz gain @ 1.5 ghz id @ 1.5 ghz 26 28 30 32 34 36 38 40 42 44 46 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) pout (dbm) psat p1db pin = 26 dbm bias conditions: vd = 35 v, idq = 360 ma, vg = -3.3 5 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 9 tga2540-fl october 2009 ? reva measured data 32 33 34 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 frequency (ghz) psat (dbm) 0 10 20 30 40 50 60 70 80 90 100 pae (%) pae psat bias conditions: vd = 35 v, idq = 360 ma, vg = -3.3 5 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 10 tga2540-fl october 2009 ? reva measured data 15 20 25 30 35 40 45 50 55 18 20 22 24 26 28 30 32 34 36 pout/tone (dbm) imd3 (db) 0.15ghz 1.0ghz 2.0ghz 3.0ghz 38 39 40 41 42 43 44 45 46 47 48 18 20 22 24 26 28 30 32 34 36 pout/tone (dbm) oip3 (dbm) 0.15ghz 1.0ghz 2.0ghz 3.0ghz bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 11 tga2540-fl october 2009 ? reva measured data 0 2 4 6 8 10 12 14 16 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 frequency (ghz) nf (db) bias conditions: vd = 30 v, idq = 360 ma, vg = -3.3 2 v, typical the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 12 tga2540-fl october 2009 ? reva electrical schematic bias procedures apply rf signal to input turn vd to 0 v adjust vg more positive until id is 360 ma. this will be vg ~ -3.3 v turn off rf supply reduce vg to -6.0v. ensure id ~ 0 ma set vg to -6.0 v set vd to +30 v bias-down procedure bias-up procedure tga2540-fl rf in rf out vd 1.0 uf 0. 1 uf vg 0.1 uf 1.0 uf 1 4 2 3 the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 13 tga2540-fl october 2009 ? reva gan mmic devices are susceptible to damage from ele ctrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 14 tga2540-fl october 2009 ? reva package pin out rf out pin 4 vd pin 3 vg pin 2 rf in pin 1 the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 15 tga2540-fl october 2009 ? reva gan mmic devices are susceptible to damage from ele ctrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended evaluation board layout 0.1 uf/ 100 v c4 1 uf/ 100 v c3 0.1 uf c2 1 uf c1 values designators board material: roger 4350; thickness: 0.010 in. the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 16 tga2540-fl october 2009 ? reva gan mmic devices are susceptible to damage from ele ctrostatic discharge. proper precautions should be observed during handling, assembly and test. ordering information xi(c) eccn flange (package bolted down) tga2540-fl package style part assembly of a tga2540-fl package 1. clean the board or module with alcohol. allow it to fully dry. 2. nylock screws are recommended for mounting the tg a2540-fl to the board. 3. to improve the thermal and rf performance, we recommend a heat sink attached to the bottom of the tga2540-fl and/or apply indium alloy shim ( 80in/15pb/ 5ag) to the bottom of tga2540-fl. 4. apply solder to each pin of tga2540-fl. 5. clean the assembly with alcohol. the information contained on this data sheet is tec hnical information as defined by 22 cfr 120.10 and is therefore us export controlled. export or t ransfer contrary to us law is prohibited.

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